Chenguang QIU

As microelectronics technology continues to shrink in size, traditional silicon-based transistors are encountering increasing technical bottlenecks.

Chenguang Qiu focuses on research in low-dimensional electronic devices, covering areas such as steep-slope sub-threshold swing ultra-low power devices, neuromorphic electronic devices, and system integration. His research can be divided into three main directions: high-performance two-dimensional field-effect transistors, high-performance carbon nanotube CMOS devices for advanced nodes, and nano-devices with new physical mechanisms. 

Chenguang proposed and realized a novel ultra-low-power transistor mechanism, the Dirac source transistor, which broke the Boltzmann thermal tail limit, expanding the scope of ultra-low-power devices.

Last year, Chenguang and his team demonstrated that low-dimensional transistors (based on high-mobility 2D indium selenide) have clear advantages over silicon-based transistors. They pushed the performance of low-dimensional material transistors to the quantum limit and achieved the world's highest room-temperature ballistic ratio of 83% in low-dimensional transistors, making it the fastest, lowest-power two-dimensional semiconductor transistor globally, surpassing the performance of commercially advanced silicon-based Fin transistors.

This year, Chenguang’s team proposed the “Yttrium element-induced 2D metallization theory” and the “atomic-level controllable precise doping technology,'" elucidating the underlying physical mechanisms of yttrium-doped 2D phase transition technology and demonstrating the feasibility of wafer-scale mass production of high-performance 2D transistors.

This innovation has the potential to build future higher-performance, lower-power sub-1 nm technology node chips, showcasing the performance potential of 2D semiconductors in future nodes, and providing important theoretical references and experimental evidence for promoting the transition of 2D electronics from the laboratory to industrialization.